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(Aside: my policy
on scientific explanations.)
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Just
how does that chip measure heat capacity? Actually, the design is compatible
with a variety of measurement techniques; we use the relaxation method. For
information on other techniques, see the reference list.
The relaxation method with this device
requires us to make four measurements, which are described below: the
relaxation time tau, the thermal conductance kappa, the sample mass, and the
heat capacity of the addenda. By solving the heat conduction equation for this
geometry (I won't do it here), one finds for the heat capacity:
C = (tau)(kappa)
This is the heat capacity of everything in
the center of the membrane-- sample, thermometers, heater, and a patch of the
membrane itself. So the addenda measurement is required to subtract off
everything that isn't the sample. The mass measurement allows you to convert
heat capacity (J/K) to specific heat (J/gK).
For the tau and kappa measurements, we use a
technique called the ac bridge method.
Here's the ac bridge method in a nutshell:
Each of the three thermometers (Pt, and 2 poly-Si or Nb-Si) has a branch on and
off the membrane. (The reason for 3 therms is that each one spans a certain
temperature range; you can't cover 1-800 K with a single thermometer). The one
on the membrane is in direct thermal contact with the sample. If nothing is
happening on the device, the thermometers are at the same temperature. The
contact pad between the two matched thermometers can be set at zero
voltage on a lock-in amplifier (ie, the voltage is measured with ac). Then
apply a dc pulse to the heater (long enough for the device to reach a steady
state). The electronics on the Si frame will stay at very nearly the same
temperature they were at before because the device is mounted on a large copper
block that easily transports away the heat delivered by the dc pulse. But the
membrane is a very poor thermal conductor, especially over the large distance
between sample and frame (0.25 cm). Everything on the membrane gets hot--
sample, heater, thermometer, and the membrane itself. The resistance of the
thermometer changes, and the voltage at the center pad no longer reads zero.
This is the essence of the ac bridge technique for measuring small changes in
resistance.
In this case, we are
interested in watching the time evolution of the off-null voltage signal so
that we know how fast the heat leaks away from the sample. When the dc pulse
mentioned in the above paragraph has been on for a while (anywhere from a few
ms to several seconds), the heat will start to leak off the membrane through
the Si-N itself, as well as the Au-Pd leads, and, at high temperatures, through
radiation. Steady state will be reached between heat in and heat out. At this
point, the dc pulse is terminated. The sample temperature relaxes back toward
the temperature of the Si block, which is observed through the voltage relaxing
back toward zero on the lock-in. If you have designed your calorimeter
properly, this relaxation is a single exponential drop-off. The main criterion
for "proper design" is that the sample and electronics on the
membrane must come to equilibrium amongst themselves much faster than
the heat can escape from the sample back to the block. Or, more formally, the
"internal" time constant for the heat to transfer from the heater to
the sample and thermometers must be much faster than the "external"
time constant which is measured on the lock-in. This is achieved by (1) having
a thin membrane and (2) using a good thermal conductor as a sample, such as a
metal. (Insulating samples can be measured if a layer of metal is also
evaporated over the sample area to provide thermal conduction; then the metal
just becomes part of the addenda).
The exponential relaxation is recorded as
data, and the time constant tau is extracted.
In this case, we are interested in the
absolute value of the difference in resistance between the 2 thermometers when
the heat is on. The thermal conductance measurement is more difficult than the
tau measurement because it is an absolute measurement; the correct tau can be
measured even if steady state is not achieved with the heat pulse-- the sample
always relaxes with the same time constant, no matter how much or little you
heated it.
To measure K, we note that by definition K =
P/delta(T), where P is the power put into the heater and delta T is the
consequent rise in temperature. In our case, we are measuring K for the device
itself: how much heat is leaking off the leads and through the membrane each
time we put heat through the heater? Clearly it's important to design a device
with as small a K as possible so that most of the heat goes to heating up the
sample, not leaking off the membrane. This causes some design challenges; see
the section at the end on the construction of the device.
P is easy to measure; we just do a 4-wire
measurement of the heater voltage after applying a known current: P = IV.
Delta T is harder. What we actually observe
is delta V, the change in voltage reading on the lockin. Knowing the current
used in the ac bridge, it is not difficult to convert delta V to delta R (see
the paper for details). That is the change in resistance between the
thermometer on the membrane and the thermometer on the frame. (Astute readers
will notice that this requires a metallic sample, and indeed, we always include
a separate metallic "conduction layer", even if the sample of interest
is insulating). If we knew R(T) for the thermometer, we would immediately have
delta T (delta T = delta(R)/[dR/dT]).
The Pt thermometers are remarkably linear,
with dR/dT about 2.5 ohm/K. But obviously the NbSi and poly-Si thermometers are
far from this simple. So we record R(T) as data, and go back later to fit the
function when we have the whole range. I have struggled with this fit, and have
decided that the best method is to fit ln(R) vs. ln(T) to a polynomial (usually
3rd or 5th order works well), then convert back to R(T).
Since I want my data-taking to be automated,
I have implemented a system by which the computer can guess the approximate K
at each temperature and use this to calculate appropriate currents to use in
the tau and K measurements. For the Pt, it just takes a linear fit between the
previous and present data points, then extrapolates. For the NbSi, I use the
function R(T)=[A/T^2] + B. This is good enough to keep the program from going
off the deep end and using too much current (thus distorting the measurement),
but I still have to go back after the fact and work out the "real" K.
The mass is measured by
putting a blank chip in the evaporator along with the device. Knowing the area
of deposition, the thickness of the film (measured on the blank by
profilometry), and the density, we can get the mass.
After the first 3
measurements, not all the work is done. The C that you have is the heat
capacity of everything that got hot-- the sample, the leads, the membrane under
the sample, the heater, the thermometer. Everything that isn't the sample is
the addenda, and must be subtracted.
Subtraction measurements are dangerous in
science because a small error can become very important. If the captain plus
her ship weigh 1500 lbs + or - 50 lbs and the ship alone weighs 1350 lbs + or -
50 lbs, then the captain weighs 150 lbs + or - 71 lbs. Not a very accurate
measurement. Thus, minimizing the addenda is crucial in calorimetry--
another reason for a thin membrane and thin-film electronics (less mass=less
heat capacity).
Our addenda is typically about 30-50% of the
total heat capacity. That may not sound great if you don't do much calorimetry,
but it's really quite good. There are some plots in our paper that show the
data with and without the addenda.
The cleanest way of subtracting out the
addenda is simply to measure it. Because the silicon nitride membrane is such a
poor thermal conductor, a "blank" device cannot be measured (the
internal time constant is the same order of magnitude as the external time
constant). However, many of our samples are insulators, and require a metal
conduction layer anyway. So we deposit the metal, measure the device, then
deposit the sample, and measure it again. No guessing involved; the addenda
subtraction is exact within the accuracy of the device.
If the sample is air-sensitive or otherwise
prone to decaying if left exposed, then there are two options. First, the
conduction layer could be deposited on top of the sample, capping it
against the air. (The metal still does its job as a thermal conduction layer
because the sample is so thin). In this case the addenda cannot be measured
independently on the same device, but it can be measured alone on a separate
device that had only the metal, not the sample, deposited on it. We find that
the difference in measured heat capacity between two different devices is
smaller than the inaccuracy of a single device, justifying the use of two
devices.
A second option is to make the whole heat
capacity measurement in-situ. We have a special UHV chamber with a
helium cryostat that fits on top. The device is mounted on the cold finger of
the cryostat, sticking down into the chamber. After measuring the addenda, we
deposit the sample and measure it immediately, without breaking vacuum. Our UHV
chamber/cryostat system can operate from 2 K to 450 K. This is how we were able
to measure the heat capacity of K3C60. You can read more
about this material on my fullerene page.
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Copyright © 1997-present Kim Allen
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Email: kimall (at symbol) mindspring.com